JAN2N3019S Datasheet, PDF (1/2 Pages) Microsemi Corporation – LOW POWER NPN SILICON TRANSISTOR

TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
Devices
2N3019
2N3019S
2N3057A
2N3700
2N3700S
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C⁽¹⁾
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
@ TC = +25⁰C⁽²⁾
2N3019; 2N3019S
2N3057A
2N3700
2N3700UB
Operating & Storage Jct Temp Range
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
Value
80
140
7.0
1.0
0.8
0.4
0.5
0.4
5.0
1.8
1.8
1.16
-55 to +175
Units
Vdc
Vdc
Vdc
Adc
W
W
0_C
TO-39* (TO-205AD)
2N3019, 2N3019S
TO- 18* (TO-206AA)
2N3700
TO-46* (TO-206AB)
2N3057A
1) Derate linearly 4.6 mW/⁰C for type 2N3019 and 2N3019S; 2.3 mW/⁰C for type 2N3057A;
2.85 mW/⁰C for type 2N3700; 6.6 mW/⁰C for type 2N3700UB for TA ≥ +25⁰C.
2) Derate linearly 28.6 mW/⁰C for type 2N3019 and 2N3019S;
10.3 mW/⁰C for types 2N3057A, 2N3700, & 2N3700UB for TC ≥ +25⁰C.
3 PIN SURFACE MOUNT*
2N3700UB
*See appendix A for package
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
outline
Characteristics
Symbol
Min. Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I_C = 100 µAdc
V(BR)_CBO
140
Vdc
Emitter-Base Breakdown Voltage
I_E = 100 µAdc
V(BR)_EBO
7.0
Vdc
Collector-Emitter Breakdown Current
I_C = 30 mAdc
V(BR)_CEO
80
Vdc
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / [phone] / Fax: [phone]
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