JAN2N2484 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN SILICON LOW POWER TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Symbol
Emitter-Base Cutoff Current
V_EB = 5.0Vdc
I_EBO
V_EB = 6.0Vdc
ON CHARACTERISTICS ⁽²⁾
Forward-Current Transfer Ratio
I_C = 1.0μAdc, V_CE = 5.0Vdc
I_C = 10μAdc, V_CE = 5.0Vdc
I_C = 100μAdc, V_CE = 5.0Vdc
h_FE
I_C = 500μAdc, V_CE = 5.0Vdc
I_C = 1.0mAdc, V_CE = 5.0Vdc
I_C = 10mAdc, V_CE = 5.0Vdc
Collector-Emitter Saturation Voltage
I_C = 1.0mAdc, I_B = 100μAdc
Base-Emitter Voltage
V_CE = 5.0Vdc, I_C = 100μAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Forward Current Transfer Ratio
I_C = 50μAdc, V_CE = 5.0Vdc, f = 5.0MHz
I_C = 500μAdc, V_CE = 5.0Vdc, f = 30MHz
Open Circuit Output Admittance
I_C = 1.0mAdc, V_CE = 5.0Vdc, f = 1.0kHz
Open Circuit Reverse-Voltage Transfer Ratio
I_C = 1.0mAdc, V_CE = 5.0Vdc, f = 1.0kHz
Input Impedance
I_C = 1.0mAdc, V_CE = 5.0Vdc, f = 1.0kHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I_C = 1.0mAdc, V_CE = 5.0Vdc, f = 1.0kHz
Output Capacitance
V_CB = 5.0Vdc, I_E = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
V_EB = 0.5Vdc, I_C = 0, 100kHz ≤ f ≤ 1.0MHz
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
V_CE(sat)
V_BE(ON)
Symbol
|h_fe|
h_oe
h_re
h_je
h_fe
C_obo
C_ibo
T4-LDS-0058 Rev. 1 (080853)
Min.
45
200
225
250
250
225
0.5
Min.
3.0
2.0
3.5
250
Max.
Unit
2.0
ηAdc
10
μAdc
500
675
800
800
800
0.3
Vdc
0.7
Vdc
Max.
Unit
0.7
40
8.0 x 10^-4
24
900
5.0
6.0
μmhos
kΩ
pF
pF
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