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JAN2N2484 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN SILICON LOW POWER TRANSISTOR
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
DEVICES
2N2484UA
2N2484UB
2N2484UBC *
* Available to JANS quality level only.
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C (1)
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
TJ, Tstg
60
60
6.0
50
360
-65 to +200
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Ambient-to-Case
2N2484
2N2484UA
2N2484UB, UBC
1. See 19500/376 for Thermal Performance Curves.
Symbol
RθJA
Value
325
275
350
Unit
Vdc
Vdc
Vdc
mAdc
mW
°C
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min. Max.
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Emitter Cutoff Current
VCE = 45Vdc
Collector-Base Cutoff Current
VCB = 45Vdc
VCB = 60Vdc
Collector-Emitter Cutoff Current
VCE = 5.0Vdc
V(BR)CEO
60
ICES
5.0
ICBO
5.0
10
ICEO
2.0
Unit
Vdc
ηAdc
ηAdc
μAdc
ηAdc
T4-LDS-0058 Rev. 1 (080853)
TO-18 (TO-206AA)
2N2484
2N2484UA
2N2484UB, UBC
(UBC = Ceramic Lid Version)
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