 English |
|
|
|
|
|
|
|
| JAN2N2369AUB Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN SILICON TRANSISTOR | |||
| |||
| ◁ |
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Emitter-Base Breakdown Voltage
VEB = 4.5Vdc
Emitter-Base Cutoff Current
VEB = 4.0Vdc
Collector- Base Breakdown Voltage
VCB = 40Vdc
Collector-Base Cutoff Current
VCB = 32Vdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10mAdc, VCE = 0.35Vdc
IC = 30mAdc, VCE = 0.4Vdc
IC = 10mAdc, VCE = 1.0Vdc
IC = 100mAdc, VCE = 1.0Vdc
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 30mAdc, IB = 3.0mAdc
IC = 100mAdc, IB = 10mAdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 30mAdc, IB = 3.0mAdc
IC = 100mAdc, IB = 10mAdc
DYNAMIC CHARACTERISTICS
Symbol
IEBO
ICBO
hFE
VCE(sat)
VBE(sat)
Parameters / Test Conditions
Forward Current Transfer Ratio
IC = 10mAdc, VCE = 10Vdc, f = 100MHz
Output Capacitance
VCB = 5.0Vdc, IE = 0, 100kHz ⤠f ⤠1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ⤠f ⤠1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc
Turn-Off Time
IC = 10mAdc; IB1 = 3.0mAdc, IB2 = -1.5mAdc
Charge Storage Time
IC = 10mAdc; IB1 = 10mAdc, IB2 = 10mAdc
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ⤠2.0%.
Symbol
|hfe|
Cobo
Cibo
Symbol
ton
toff
tS
Min.
40
30
40
20
0.70
0.80
Min.
5.0
Min.
Max.
10
0.25
10
0.2
120
120
120
120
0.20
0.25
0.45
0.85
0.90
1.20
Max.
10
4.0
5.0
Unit
μAdc
μAdc
Vdc
Vdc
Unit
pF
pF
Max.
Unit
12
ηs
18
ηs
13
ηs
T4-LDS-0057 Rev. 2 (081394)
Page 2 of 2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese