JAN2N2369AUB Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/317
DEVICES
2N2369A
2N2369AU
2N2369AUA
2N2369AUB
2N4449
2N2369AUBC *
* Available to JANS quality level only.
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
2N2369A / U / UA
2N4449 / UB / UBC
2N2369A / U / UA
2N4449 / UB / UBC
Collector-Emitter Voltage
Total Power Dissipation @
T_A = +25°C
2N2369A; 2N4449
UA, UB, UBC
U
Symbol
V_CEO
V_EBO
V_CBO
I_CES
P_T
Value
15
20
4.5
6.0
40
40
0.36 ⁽¹⁾
0.36 ^{(1, 5)}
0.50 ⁽⁴⁾
Unit
Vdc
Vdc
Vdc
Vdc
W
Operating & Storage Junction Temperature Range
T_op, T_stg
-65 to +200
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Value Unit
Thermal Resistance, Ambient-to-Case
Note:
1.
2.
3.
4.
5.
2N2369A; 2N4449
UA, UB, UBC
R_θJA
400
400 ⁽⁵⁾
°C/W
U
350
Derate linearly 2.06 mW°/C above T_A = +25°C.
Derate linearly 4.76 mW°/C above T_C = +95°C.
Derate linearly 3.08 mW°/C above T_C = +70°C.
Derate linearly 3.44 mW°/C above T_A = +54.5°C.
Mounted on FR-4 PCB (1Oz. Cu) with contacts 20 mils larger than package pads.
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
Collector-Base Cutoff Current
V_CE = 20Vdc
Symbol
Min. Max. Unit
V_(BR)CEO
15
Vdc
I_CES
0.4
μAdc
T4-LDS-0057 Rev. 2 (081394)
TO-18 (TO-206AA)
2N2369A
TO-46 (TO-206AB)
2N4449
SURFACE MOUNT
UA
SURFACE MOUNT
UB & UBC
(UBC = Ceramic Lid Version)
SURFACE MOUNT
U (Dual Transistor)
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