JAN2N1890S Datasheet, PDF (2/3 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR

2N1711, 2N1890 JAN SERIES
Characteristics
ON CHARACTERISTICS ⁽³⁾
Forward-Current Transfer Ratio
I_C = 10 µAdc, V_CE = 10 Vdc
I_C = 150 mAdc, V_CE = 10 Vdc
I_C = 500 mAdc, V_CE = 10 Vdc
Collector-Emitter Saturation Voltage
2N1711, S
I_C = 150 mAdc, I_B = 15 mAdc
2N1711, S
2N1890, S
I_C = 50 mAdc, I_B = 5.0 mAdc
Base-Emitter Saturation Voltage
2N1890, S
I_C = 150 mAdc, I_B = 15 mAdc
I_C = 50 mAdc, I_B = 5.0 mVdc
2N1890, S
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward-Current Transfer Ratio
I_C = 1.0 mAdc, V_CE = 5.0 Vdc
I_C = 5.0 mAdc, V_CE = 10 Vdc
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward-Current Transfer Ratio
I_C = 50 mAdc, V_CE = 10 Vdc; f = 20 MHz
Small-Signal Short-Circuit Input Impedance
I_C = 5.0 mAdc, V_CB = 10 Vdc
Small-Signal Short-Circuit Output Admittance
I_C = 5.0 mAdc, V_CB = 10 Vdc
2N1711, S
2N1890, S
Output Capacitance
V_CB = 10 Vdc, I_E = 0, 100 kHz ≤ f ≤ 1.0 MHz
2N1711, S
2N1890, S
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 1 of MIL-PRF-19500/225)
(3) Pulse Test: Pulse Width 250 to 350µs, Duty Cycle ≤ 2.0%.
Symbol
h_FE
V_CE(sat)
V_BE(sat)
h_fe
h_fe
h_ib
h_ob
C_obo
t_{on +} t_off
Min. Max. Unit
20
100
300
50
1.5
Vdc
5.0
1.2
1.3
Vdc
0.9
80
200
90
270
3.5
12
4.0
8.0
Ω
1.0
µΩ
.03
8.0
25
pF
5.0
15
30
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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