JAN2N1890S Datasheet, PDF (1/3 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/225
Devices
2N1711
2N1890
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Impedance
1) Derate linearly 4.57 mW/⁰C for TA > 25⁰C
2) Derate linearly 17.2 mW/⁰C for TC > 25⁰C
Symbol
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
Symbol
Z_θJX
2N1711 2N1890
75
100
7.0
500
0.8
3.0
-65 to +200
Max.
58
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I_C = 100 µAdc
2N1711, S
2N1890, S
V(BR)_CBO
Collector-Emitter Breakdown Voltage
R_BE = 10 Ω, I_C = 100 mAdc
2N1711, S
2N1890, S
V(BR)_CER
Collector-Emitter Breakdown Voltage
I_C = 30 mAdc
2N1711, S
2N1890, S
V(BR)_CEO
Emitter-Base Breakdown Voltage
I_E = 100 µAdc
Collector-Base Cutoff Current
V(BR)_EBO
V_CB = 60 Vdc
2N1711
I_CBO
V_CB = 80 Vdc
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
2N1890
I_EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
mAdc
W
W
0_C
Unit
0_C/W
TO-5*
*See appendix A for package
outline
Min. Max.
Unit
75
Vdc
100
50
Vdc
80
30
Vdc
60
7.0
Vdc
10
ηAdc
10
5.0
ηAdc
120101
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