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JAN2N1480 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN SILICON MEDIUM POWER TRANSISTOR
2N1479, 2N1480, 2N1481, 2N1482 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 200 mAdc, VCE = 4.0 Vdc
2N1479, 2N1480
2N1481, 2N1482
Collector-Emitter Saturation Voltage
IC = 200 mAdc, IB = 20 mAdc
2N1479, 2N1480
IC = 200 mAdc, IB = 10 mAdc
Base-Emitter Voltage
2N1481, 2N1482
IC = 200 mAdc, VCE = 4.0 Vdc
DYNAMIC CHARACTERISTICS
Forward Current Cutoff Frequency
IC = 5.0 mAdc, VCB = 28 Vdc
SWITCHING CHARACTERISTICS
Total Switching Time
VCC = 12 Vdc; RC = 59 Ω; IB0 = IB2 = 8.5 mAdc; IB1= 20 mAdc
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
hFE
VCE(sat)
VBE
fab
ton + toff
Min. Max. Unit
20
60
35
100
0.75
Vdc
0.75
1.5
Vdc
800
kHz
25
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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