JAN2N1480 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN SILICON MEDIUM POWER TRANSISTOR

TECHNICAL DATA
NPN SILICON MEDIUM POWER TRANSISTOR
Qualified per MIL-PRF-19500/207
Devices
Qualified Level
2N1479
2N1480
2N1481
2N1482
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base-Current
Total Power Dissipation @ TA = 25⁰C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_T
T_J, T_stg
Symbol
R_θJC
2N1479
2N1481
40
2N1480
2N1482
55
60
100
12
1.5
1.0
1.0
-65 to +200
Max.
35
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 50 mAdc
2N1479, 2N1481
2N1480, 2N1482
V(BR)_CEO
Collector-Emitter Breakdown Voltage
V_EB = 1.5 Vdc, I_C = 0.25 mAdc
V_EB = 1.5 Vdc, I_C = 0.25 mAdc
2N1479, 2N1481
2N1480, 2N1482
V(BR)_CEX
Collector-Base Cutoff Current
V_CB = 30 Vdc
2N1479, 2N1481
I_CBO
V_CB = 50 Vdc
2N1480, 2N1482
Emitter-Base Cutoff Current
V_EB = 12 Vdc
I_EBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
0_C
Unit
0_C/W
Min.
40
55
60
100
TO-5*
*See Appendix A for
Package Outline
Max.
Unit
Vdc
Vdc
5.0
µAdc
5.0
10
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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