GC4310 Datasheet, PDF (2/4 Pages) Microsemi Corporation – CONTROL DEVICES High Speed NIP Diodes

GC4310 – GC4375
®
TM
CONTROL DEVICES
High Speed NIP Diodes
RoHS Compliant
.
DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E
Model Number ¹
V_B(V)
I_R=10μA
(Min)
C_J (pF) ²
@V_R=10V
(Max)
R_S(Ω) ³
@20 mA
(Max)
T_L(nS)
I_R=6mA/I_F=10mA
(Typ)
Thermal
Resistance
θ (˚C/W)
(Max)
GC4371
70
0.1
0.9
70
70
GC4372
70
0.2
0.7
70
70
GC4373
70
0.3
0.6
70
60
GC4374
70
0.4
0.5
70
50
GC4375
70
0.5
0.4
70
40
GC4310
100
0.06
1.5
170
80
GC4311
100
0.1
1
170
70
GC4312
100
0.2
0.9
170
70
GC4313
100
0.3
0.8
170
60
GC4314
100
0.4
0.6
170
50
GC4315
100
0.5
0.4
170
40
GC4320
200
0.06
1.5
200
80
GC4321
200
0.1
1.2
200
70
GC4322
200
0.2
1
200
70
GC4323
200
0.3
0.9
200
60
GC4324
200
0.4
0.8
200
50
GC4325
200
0.5
0.5
200
40
Notes:
1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request.
2. Capacitance is measured at 1 MHz.
3. Resistance is measured AT 1 GHz using transmission loss techniques.
The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and
characterization is completed using a style 30 package. Diodes are available in many case styles. Each
type offers performance trade-offs. The proper choice of package style depends on the end application and
operating environment. Consult factory for assistance. Standard polarity (PIN) diodes and higher voltage
PIN and NIP diodes are also available. (See data sheets for GC4200, GC4400, and GC4500 series
respectively.)
Copyright  2007
Rev: 2009-02-02
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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