GC4310 Datasheet, PDF (1/4 Pages) Microsemi Corporation – CONTROL DEVICES High Speed NIP Diodes

®
TM
DESCRIPTION
The GC4300 series are high speed (anode base) NIP diodes made with high
resistivity reverse epitaxial silicon material. These diodes are passivated with
silicon dioxide for high stability and reliability and have been proven by
thousands of device hours in high reliability systems.
The NIP diode is used when negative bias current is available for forward
conduction and will operate with as little as -10 mA bias. These diodes have
somewhat faster speeds as compared with similar PIN diodes.
These devices can withstand storage temperatures from -65°C to +200°C and
will operate over the range from -55°C to +150°C. All devices meet or exceed
military environmental specifications of MIL-PRF-19500.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise specified.
Consult the factory if you have special requirements.
APPLICATIONS
The GC4300 series can be used in RF circuits as an on/off element, as a
switch, or as a current controlled resistor in attenuators extending over the
frequency range from UHF through Ku band.
Switch applications include high speed switches (ECM systems), TR witches,
channel or antenna selection switches (telecommunications), duplexers
(radar) and digital phase shifters (phased arrays).
The GC4300 series are also used as passive and active limiters for low to
moderate RF power levels.
Attenuator type applications include amplitude modulators, AGC attenuators,
power levelers and level set attenuators.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Maximum Leakage Current
@80% of Minimum Rated V_B
I_R
0.5
uA
Storage Temperature
T_STG
-65 to +200
ºC
Operating Temperature
T_OP
-55 to +150
ºC
GC4310 – GC4375
CONTROL DEVICES
High Speed NIP Diodes
RoHS Compliant
KEY FEATURES
 Available as packaged devices or
as chips for hybrid applications
 Low Loss
 Suitable for applications to 18Ghz
 High Speed
 Low Insertion Loss
 High Isolation
 Reverse Polarity for Applications
with special Bias Considerations
 RoHS Compliant ¹
APPLICATIONS/BENEFITS
 RF / Microwave Switching
 Duplexers
 Digital Phase Shifting
 Phased Array Radar
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
1 _{These devices are supplied with gold}
plated terminations.
Copyright  2007
Rev: 2009-02-02
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
Page 1