DRF200G Datasheet, PDF (2/4 Pages) Microsemi Corporation – MOSFET Driver

Output Characteristics
Symbol
Parameter
R_out
Output Resistance
F_MAX
Operating Frequency CL=3000nF + 50Ω
F_MAX
Operating Frequency RL=50Ω
DRF200G
Min
Typ
Max
Unit
1
Ω
15
MHz
30
Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJHS
T_JSTG
T_JMAX
Thermal Resistance Junction to Case
Thermal Resistance Junction to Heat Sink
Storage Temperature
Maximum Junction Temperature
P_D
Maximum Power Dissipation @ T_SINK = 25°C
P_DC
Total Power Dissipation @ T_C = 25°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Ratings
1.4
2.2
-55 to 150
175
>60
>100
Unit
°C/W
°C
W
Figure 1, DRF100 Simplified Circuit Diagram
The Simplified DRF100 Circuit Diagram is illustrated above. The Schmitt trigger input (pin 1), Kelvin signal ground (pin 2) and the Anti-Ring
Function, provide improved stability and control. The IN pin (1) is applied to a Schmitt Trigger. The signal is then applied to the intermediate
drivers and level shifters; this section contains proprietary circuitry designed specifically for ring abatement. The P channel and N channel
power drivers provide the high current to the OUTPUT (pin 5.)