DRF1301 Datasheet, PDF (2/4 Pages) Microsemi Corporation – MOSFET Push-Pull Hybrid

MOSFET Specifications (Per-Section)
Symbol
Parameter
BV_DSS
I_D
R_DS(on)
Drain Source Voltage
Continuous Drain Current T_HS = 25°C
Drain-Source On State Resistance
Dynamic Characteristics (Per-Section)
Symbol
Parameter
C
ISS
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
Thermal Characteristics (Total Package)
Symbol
Parameter
R_θJC
R_θJHS
T_JSTG
P_D
P_DC
Junction to Case Thermal Resistance
Junction to Heat Sink Thermal Resistance
Storage Junction Temperature
Maximum Power Dissipation @ T_SINK = 25°C
Total Power Dissipation @ T_C = 25°C
DRF1301
Min
Typ
Max
Unit
1000
V
15
A
1
Ω
Min
Typ
Max
Unit
1800
335
pF
75
Ratings
.06
.134
-55 to 150
1.1
2.5
Unit
°C/W
°C
KW
Section A and B Output Switching Performance
Symbol
Characteristic
Min
Typ
Max
Typ
T_ON
T_OFF
T_DLY(ON)
T_DLY(OFF)
∆T_DLY(ON)
Leading Edge 10% to 90%
Trailing Edge 10% to 90%
Total Throughput Delay Time, ON
Total Throughput Delay Time, OFF
Delta T_ON Delay between Section A and B
2
3
4
45
TBD
49
45
TBD
47
ns
49
50
51
-0.5
0
1.5
∆T_DLY(OFF)
Delta T_OFF Delay between Section A and B
0
0.6
1.3
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Figure 1, DRF1301 Circuit Diagram
The DRF1301 is configured as a Push Pull Hybrid incorporating two independent channels configured with a common source each consisting of a
driver, a high voltage MOSFET and by-pass capacitors. The function of the by-pass capacitors C1 and C2 is to reduce the internal parasitic loop
inductance. This coupled with the tight geometry of the hybrid allows optimal gate drive to the MOSFET. This low parasitic approach coupled
with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-Ring function; provide improved stability and control in Kilowatt to Multi-
Kilowatt high frequency applications. The IN pin should be referenced to the Kelvin Ground (SG) and is applied to a Schmitt Trigger. The SG
pin is a Kelvin return for the IN pin only. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary
circuitry designed specifically for ring abatement. To further increase the utility of the device the driver die and the MOSFET die are adjacent die
selected. This provides a very close match in the turn on and propagation delays.