ARF1500 Datasheet, PDF (2/4 Pages) Advanced Power Technology – RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE

DYNAMIC CHARACTERISTICS
Symbol Characteristic
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V_GS = 0V
V_DS = 150V
f = 1 MHz
V_GS = 15V
V_DD = 250
I_D = 60A @ 25°C
R_G = 1.6Ω
ARF1500
MIN TYP MAX UNIT
5150 6030
500 650 pF
215 225
7.5
6.0
ns
20
10
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
G_PS Common Source Amplifier Power Gain
η
Drain Efficiency
Ψ
Electrical Ruggedness VSWR 10:1
f = 27.12 MHz
V_GS = 0V V_DD = 125V
P_out = 750W
17
19
dB
70
75
%
No Degradation in Output Power
1 _{Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.}
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Per transistor section unless otherwise specified.
20,000
10,000
5000
C_iss
1000
C_oss
500
C_rss
100
.1
1
10
100 200
Figure ^V1,^DT^Sy^, p^Di^Rca^Al^INC^-a^Tp^Oa^-c^Sit^Oa^Unc^Re^Cv^Es^V. D^Or^La^Ti^An^G-to^E-S^(Vo^Ou^Lrc^Te^S)Voltage
60
V_DS> I_D(ON) x R_DS(ON) MAX.
250μSEC. PULSE TEST
50
@ <0.5 % DUTY CYCLE
T_J = -55°C
40
30
20
10
T_J = +25°C
T_J = +125°C
0
0 2 4 6 8 10 12 14
V_FGiSg,_uG_reAT_2,E_T-T_yO_pi-_cS_aO_l U_TrR_aC_nsE_feV_rO_CL_hTA_arG_aE_ct(_eV_riO_sL_tiT_cS_s)
240
100
50
DATA FOR BOTH SIDES
IN PARALLEL
OPERATION HERE
LIMITED BY R_DS (ON)
100us
10
5
T_C =+25°C
T_J =+200°C
SINGLE PULSE
1
1
5 10
50 100
500
Fig^Vu^Dr^Se^,
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
3, Typical Maximum Safe Operating Area
1ms
10ms
100ms