 English |
|
|
|
|
|
|
|
| ARF1500 Datasheet, PDF (1/4 Pages) Advanced Power Technology – RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE | |||
| |||
|
S DS
S
D
S
ARF1500
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
ARF1500
BeO
1525-xx
S
S
G
G
S
S
125V
750W
40MHz
The ARF1500 is an RF power transistor designed for very high power scientiï¬c, commercial, medical and industrial
RF power generator and ampliï¬er applications up to 40 MHz.
⢠Speciï¬ed 125 Volt, 27.12 MHz Characteristics:
⢠High Performance Power RF Package.
â¢
Output Power = 750 Watts.
⢠Very High Breakdown for Improved Ruggedness.
â¢
Gain = 17dB (Class C)
⢠Low Thermal Resistance.
â¢
Efï¬ciency > 75%
⢠Nitride Passivated Die for Improved Reliability.
⢠RoHS Compliant
MAXIMUM RATINGS
Symbol
VDSS
ID
VGS
PD
TJ,TSTG
TL
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: TC = 25°C unless otherwise speciï¬ed.
ARF1500
UNIT
500
Volts
60
Amps
±30
Volts
1500
Watts
-55 to 175
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BVDSS
VDS(ON)
IDSS
IGSS
gfs
Visolation
VGS(TH)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
On State Drain Voltage 1 (ID(ON) = 30A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 25V, ID = 30A)
RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
MIN TYP MAX UNIT
500
Volts
6
7.5
100
μA
1000
±400 nA
6
7.5
mhos
TBD
Volts
3
5
Volts
THERMAL CHARACTERISTICS
Symbol Characteristic (per package unless otherwise noted)
RθJC
RθJHS
Junction to Case
Junction to Sink (Use High Efï¬ciency Thermal Joint Compound and Planar Heat Sink Surface.)
MIN TYP MAX
0.10
0.16
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
UNIT
°C/W
Microsemi Website - http://www.microsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese