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APTGL30H120T1G Datasheet, PDF (2/5 Pages) Microsemi Corporation – Full bridge Trench + Field Stop IGBT4 Power Module
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APTGL30H120T1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
VGE = 0V, VCE = 1200V
250 µA
VGE = 15V
IC = 25A
Tj = 25°C
Tj = 150°C
1.85 2.25
V
2.25
VGE = VCE , IC = 0.8mA
VGE = 20V, VCE = 0V
5.0 5.8 6.5 V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
QG Gate charge
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
1430
115
pF
85
VGE= ±15V ; VCE=600V
IC=25A
0.2
µC
Inductive Switching (25°C)
130
VGE = ±15V
VCE = 600V
IC = 25A
RG = 20Ω
20
ns
300
45
Inductive Switching (150°C)
150
VGE = ±15V
VCE = 600V
IC = 25A
35
ns
350
RG = 20Ω
80
VGE = ±15V
TJ = 25°C
2
mJ
VCE = 600V TJ = 150°C
3
IC = 25A
TJ = 25°C
1.5
RG = 20Ω
TJ = 150°C
2.2
mJ
VGE ≤15V ; VBus = 900V
tp ≤10µs ; Tj = 150°C
100
A
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
1200
V
IRM Maximum Reverse Leakage Current
VR=1200V
Tj = 25°C
Tj = 150°C
100
µA
500
IF DC Forward Current
VF Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 25A
IF = 50A
IF = 25A
IF = 25A
VR = 667V
di/dt =200A/µs
Tc = 80°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
25
A
2.6 3.1
3.2
V
1.8
320
ns
360
480
nC
1800
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