APTGL30H120T1G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full bridge Trench + Field Stop IGBT4 Power Module

Full bridge
Trench + Field Stop IGBT4
Power Module
3
4
Q1
Q3
CR1 CR3
5
2
61
Q2
Q4
CR2 CR4
7
9
8
10
11
NTC
12
Pins 3/4 must be shorted together
Absolute maximum ratings
Symbol
Parameter
V_CES Collector - Emitter Breakdown Voltage
I_C Continuous Collector Current
I_CM
V_GE
P_D
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
APTGL30H120T1G
V_CES = 1200V
I_C = 30A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT 4 Technology
- Low voltage drop
- Low leakage current
- Low switching losses
- Low tail current
- Soft recovery parallel diodes
- Low diode VF
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
T_C = 25°C
T_C = 80°C
T_C = 25°C
T_C = 25°C
Max ratings
Unit
1200
V
45
30
A
50
±20
V
170
W
T_j = 150°C 50A @ 1100V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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