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| APTGF50TDU120PG Datasheet, PDF (2/7 Pages) Microsemi Corporation – Triple dual Common Source NPT IGBT Power Module | |||
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APTGF50TDU120PG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
IGES Gate â Emitter Leakage Current
VGE = 0V
VCE = 1200V
Tj = 25°C
Tj = 125°C
250 µA
500
VGE =15V
IC = 50A
Tj = 25°C
Tj = 125°C
3.2 3.7 V
4.0
VGE = VCE, IC = 1 mA
4.5
6.5 V
VGE = 20 V, VCE = 0V
100 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge
Qgc
Td(on)
Gate â Emitter Charge
Gate â Collector Charge
Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
VGS = 15V
VBus = 600V
IC = 50A
Inductive Switching (25°C)
VGE = 15V
VBus = 600V
IC = 50A
RG = 5 â¦
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 50A
RG = 5 â¦
VGE = ±15V
VBus = 600V
IC = 50A
RG = 5 â¦
Tj = 125°C
Tj = 125°C
Min Typ Max Unit
3450
330
pF
220
330
35
nC
200
35
65
ns
320
30
35
65
ns
360
40
6.9
mJ
3.05
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
IRM
IF
VF
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
VR=1200V
IF = 60A
IF = 120A
IF = 60A
1200
V
Tj = 25°C
Tj = 125°C
250 µA
500
Tc = 70°C
60
A
2.0 2.5
2.3
V
Tj = 125°C
1.8
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Tj = 25°C
400
IF = 60A
VR = 800V
Tj = 125°C
470
ns
di/dt =200A/µs Tj = 25°C
1200
nC
Tj = 125°C
4000
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2-7
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