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APTGF50TDU120PG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Triple dual Common Source NPT IGBT Power Module | |||
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APTGF50TDU120PG
Triple dual Common Source
NPT IGBT Power Module
VCES = 1200V
IC = 50A @ Tc = 80°C
C1
G1
C3
G3
C5
G5
Application
⢠AC Switches
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
E1
E2
G2
C2
E3
E1/E2
E4
G4
C4
E5
E3/E4
E6
G6
C6
C1
C3
C5
G1
G3
G5
E1/E2
E1
E3 /E4
E3
E5 /E 6
E5
E2
E4
E6
G2
G4
G6
C2
C4
C6
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate â Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Features
E5/E6
⢠Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
⢠Kelvin emitter for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency
operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Very low (12mm) profile
⢠Easy paralleling due to positive TC of VCEsat
⢠Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
⢠RoHS compliant
Max ratings Unit
1200
V
Tc = 25°C
75
Tc = 80°C
50
A
Tc = 25°C
150
±20
V
Tc = 25°C
312
W
Tj = 150°C 100A @ 1200V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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