APT5012WVR Datasheet, PDF (2/6 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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TECHNICAL DATA SHEET
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Tel: [phone] Fax: [phone]
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Capacitance:
Input capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge:
On-State Gate Charge ⁽³⁾
Gate to Source Charge
Gate to Drain (“Miller”) Charge
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Continuous Source Current (Body Diode)
Pulsed Source Current ⁽¹⁾ (Body Diode)
Diode Forward Voltage ⁽²⁾
V_GS = 0V, I_S = -40A
Reverse Recovery Time
Reverse Recovery Charge
V_GS = 0V
V_DS = 25V
f =1 MHz
V_GS = 10V
V_DS = 250V
I_D = 40A
I_D = 40A
V_GS = 15Vdc
V_DD = 250Vdc
R_G = 0.6Ω
di/dt ≤ 100A/µs
I_S = -40A
di/dt ≤ 100A/µs
I_S = -40A
Symbol
Ciss
Coss
Crss
Q_g(on)
Q_gs
Q_gd
Symbol
t_d(on)
t_r
t_d(off)
t_f
I_S
I_SM
V_SD
t_rr
Q_rr
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Junction to Case
Symbol
R_θJC
Junction to Ambient
R_θJA
(1) Repetitive Rating: Pulse width limited by maximum junction temperature.
(2) Pulse Test: Pulse width < 380µS, Duty Cycle < 2%
(3) See MIL-STD-750 method 3471
(4) Starting T_j = +25°C, L = 3.13mH, R_G = 25Ω, Peak I_L = 40A
TYP
7400
1000
380
312
50
127
TYP
14
165
54
5
620
14.7
TYP
Max.
Unit
8900
1400
pF
570
470
nC
75
190
Max.
Unit
30
80
ns
80
10
40
A
160
A
1.3
V
ns
uC
Max.
0.28
40
Unit
°C/W
°C/W
T4-LDS-0181 Rev. 1 (101414)
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