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| APT5012WVR Datasheet, PDF (1/6 Pages) Advanced Power Technology – Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. | |||
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DEVICES
N-CHANNEL MOSFET
APT5012WVR
POWER MOS V®
500V
40A 0.120â¦
LEVELS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Drain â Source Voltage
VDS
500
Vdc
Gate â Source Voltage
VGS
± 30
Vdc
Gate â Source Transient
VGSM
± 40
Vdc
Continuous Drain Current
TC = +25°C
ID
40
Adc
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
TC = +25°C
TC = +25°C
IDM
160
Adc
PD
450 (1)
3.6
W
W/°C
Drain to Source On State Resistance
Rds(on)
0.120 (2)
Ω
Operating & Storage Junction Temperature Range
Top, Tstg -55 to +150
°C
Lead temperature: 0.063â from Case for 10 Se.
Avalanche Current (3) (Repetitive/ Non-repetitive)
TL
300
°C
IAR
40 (1)
Adc
EAR
50 (1)
mJ
EAS
2500 (4)
mJ
Note: (1) Repetitive Rating: Pulse width limited by maximum junction temperature.
(2) Pulse Test: Pulse width < 380µS, Duty Cycle < 2%.
(3) MIL-STD-750 Method 3471.
(4) Starting Tj = +25°C, L = 3.13mH, RG = 25â¦, Peak IL = 40A.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µAdc
Gate-Source Voltage (Threshold)
VDS = VGS = ±30, ID = 2.5mA
Gate Current
VGS = ±30V, VDS = 0V
Drain Current
VGS = 0V, VDS = 500V
VGS = 0V, VDS = 400V, TC = +125°C
Diode Forward Voltage
VGS = 0V, ID = 31.5A pulsed
V(BR)DSS 500
Vdc
VGS(th)
IGSS
2.0 4.0 Vdc
±100 nAdc
IDSS1
IDSS2
VSD
25 µAdc
0.25
1.3 Vdc
TO-267
D
G
S
T4-LDS-0181 Rev. 1 (101414)
Page 1 of 6
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