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APT47N65BC3 Datasheet, PDF (2/5 Pages) Microsemi Corporation – Super Junction MOSFET | |||
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DYNAMIC CHARACTERISTICS
APT47N65BC3
Symbol Characteristic
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 47A @ 25°C
RESISTIVE SWITCHING
VGS = 13V
VDD = 380V
ID = 47A @ 125°C
RG = 1.8Ω
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
ID = 47A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
VDD = 400V VGS = 15V
ID = 47A, RG = 5Ω
MIN
TYP
7015
2565
210
260
29
110
18
27
110
8
670
980
1100
1200
MAX
UNIT
pF
nC
ns
μJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
IS
Continuous Source Current (Body Diode)
ISM Pulsed Source Current 1 (Body Diode)
VSD
Diode Forward Voltage 2 (VGS = 0V, IS = -47A)
t rr
Reverse Recovery Time (IS = -47A, dlS/dt = 100A/μs, VR = 350V)
Q rr Reverse Recovery Charge (IS = -47A, dlS/dt = 100A/μs, VR = 350V)
dv/dt
Peak Diode Recovery dv/dt 5
THERMAL CHARACTERISTICS
Symbol Characteristic
47
Amps
141
1.2
Volts
580
ns
23
μC
6
V/ns
MIN TYP MAX UNIT
RθJC
RθJA
Junction to Case
Junction to Ambient
0.30
62
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4
5
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than the
150°C
6 Eon includes diode reverse recovery. See ï¬gures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemi Reserves the right to change, without notice, the speciï¬cations and information contained herein.
0.35
0.30
0.9
0.25
0.7
0.20
0.5
0.15
Note:
0.10
0.3
t1
0.05
0.1
SINGLE PULSE
t2
Duty Factor D = t1/t2
0.05
Peak TJ = PDM x ZθJC + TC
0
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
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