APT47N65BC3 Datasheet, PDF (1/5 Pages) Microsemi Corporation – Super Junction MOSFET

APT47N65BC3
600V 47A 0.070Ω
Super Junction MOSFET
COOLMOS
Power Semiconductors
• Ultra low R_DS(ON)
• Increased Power Dissipation
• Low Miller Capacitance
• Ultra Low Gate Charge, Q_g
• Avalanche Energy Rated
• TO-247 or Surface Mount D³PAK Package
MAXIMUM RATINGS
Symbol Parameter
TO-247
D³
All Ratings: T_C = 25°C unless otherwise specified.
APT47N65BC3
UNIT
V_DSS
I_D
I_DM
V_GS
V_GSM
P_D
Drain-Source Voltage
Continuous Drain Current @ T_C = 25°C
Pulsed Drain Current ¹
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
T_J,T_STG
T_L
dv_/dt
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V_DS = 480V, I_D = 47A, T_J = 125°C)
Repetitive Avalanche Current ⁷
Repetitive Avalanche Energy ⁷
Single Pulse Avalanche Energy ⁴
650
47
141
±20
±30
417
3.33
-55 to 150
260
50
20
1
1800
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BV_DSS
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250μA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 30A)
Zero Gate Voltage Drain Current (V_DS = 650V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 650V, V_GS = 0V, T_J = 150°C)
Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 2.7mA)
650
2.10
0.06
0.5
3
0.07
25
250
±100
3.9
Volts
Ohms
μA
nA
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com