APT30SCD120S Datasheet, PDF (2/4 Pages) Microsemi Corporation – Zero Recovery Silicon Carbide Schottky Diode

THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
R_θJC
Junction-to-Case Thermal Resistance
W_T
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT30SCD120B_S
Typ Max Unit
0.43 °C/W
0.22
oz
5.9
g
10
lb·in
1.1
N·m
TYPICAL PERFORMANCE CURVES
0.60
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
Note :
t1
t2
Duty Factor D = ^t1/t2
Peak T _J = P _DM x Z _θJC + T _C
0
10^-5
10^-4
10^-3
10^-2
0.1
1
10
100
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
140
T_J = -55°C
120
100
80
60
1^T0^J0 ^{= 25°C}
T_J = 150°C
T_J = 125°C
40
20
0
01
23 4 5 6 7 8
V_F, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
100
80
60
40
20
0
25
50
75
100 125 150
Case Temperature (°C)
FIGURE 3, Maximum Forward Current vs. Case Temperature