 English |
|
|
|
|
|
|
|
| APT30SCD120S Datasheet, PDF (1/4 Pages) Microsemi Corporation – Zero Recovery Silicon Carbide Schottky Diode | |||
| |||
|
APT30SCD120B
APT30SCD120S
1200V 30A
Zero Recovery Silicon Carbide Schottky Diode
PRODUCT APPLICATIONS
⢠Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
⢠Power Factor Correction (PFC)
PRODUCT FEATURES
⢠Zero Recovery Times (trr)
⢠Popular TO-247 Package or
surface mount D3PAK package
⢠Low Forward Voltage
⢠Low Leakage Current
PRODUCT BENEFITS
⢠Higher Reliability Systems
⢠Minimizes or eliminates
snubber
T O -247
D3PAK
1
2
1
2
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
TC = 25°C unless otherwise speciï¬ed.
Ratings
Unit
VR
VRRM
VRWM
IF
IFRM
IFSM
Ptot
TJ, TSTG
TL
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum D.C. Forward current
TC = 25°C
TC = 135°C
Repetitive Peak Forward Suge Current (TJ = 45°C, tp = 10ms, Half Sine Wave)
Non-Repetitive Forward Surge Current (TJ = 25°C, tp = 10ms, Half Sine)
Power Dissipation
TC = 25°C
TC = 125°C
Operating and Storage Junction Temperature Range
Lead Temperature for 10 Seconds
1200
99
29
150
330
291
93
-55 to 150
300
Volts
Amps
W
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
VF
Forward Voltage
IF = 30A TJ = 25°C
IF = 30A, TJ = 150°C
IRM
Maximum Reverse Leakage Current
VR = 1200V TJ = 25°C
VR = 1200V, TJ = 150°C
Qc
Total Capactive Charge VR = 800V, IF = 30A, di/dt = -100A/μs, TJ = 25°C
Junction Capacitance VR = 0V, TJ = 25°C, f = 1MHz
CT
Junction Capacitance VR = 200V, TJ = 25°C, f = 1MHz
Junction Capacitance VR = 400V, TJ = 25°C, f = 1MHz
Min Typ Max Unit
1.5
2.1
200
2100
1.8
Volts
600
μA
3000
nC
228
pF
167
Microsemi Website - http://www.microsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese