APT30DL60B Datasheet, PDF (2/4 Pages) Microsemi Corporation – Ultrasoft Recovery Rectifi er Diode

DYNAMIC CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
t_rr
Reverse Recovery Time
I_F = 1A, di_F/dt = -100A/μs, V_R = 30V, T_J = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -200A/μs
V_R = 400V, T_C = 25°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -200A/μs
V_R = 400V, T_C = 125°C
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Maximum Reverse Recovery Current
I_F = 30A, di_F/dt = -1000A/μs
V_R = 400V, T_C = 125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
Min
R_θJC
Junction-to-Case Thermal Resistance
W_T
Package Weight
Torque Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
APT30DL60B_S(G)
Typ Max Unit
64
317
962
7
561
2244
9
264
3191
26
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Typ Max Unit
.88
°C/W
0.22
oz
5.9
g
10
lb·in
1.1
N·m
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0 _10-5
10^-4
10^-3
10^-2
Note:
t1
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION