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APT30DL60B Datasheet, PDF (1/4 Pages) Microsemi Corporation – Ultrasoft Recovery Rectifi er Diode
APT30DL60B(G)
APT30DL60S(G)
600V 30A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Applications
- Induction Heating
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
PRODUCT FEATURES
• Ultrasoft Recovery Times (trr)
• Popular TO-247 Package or
Surface Mount D3PAK Package
PRODUCT BENEFITS
• Soft Switching - High Qrr
• Low Noise Switching
- Reduced Ringing
• Ultra Low Forward Voltage
• Higher Reliability Systems
• Low Leakage Current
• Minimizes or eliminates
snubber
(B) TO-247
D3PAK
1
2
(S)
1
2
1
2
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol Characteristic / Test Conditions
All Ratings : TC = 25°C unless otherwise specified.
Ratings
Unit
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
TJ, TSTG
TL
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward current (TC = 126°C, Duty Cycle = 0.5)
RMS Forward Currrent (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3 ms)
Operating and Storage Junction Temperature Range
Lead Temperature for 10 Seconds
600
30
51
110
-55 to 175
300
Volts
Amps
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
VF
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
IF = 30A
IF = 60A
IF = 30A, TJ = 125°C
VR = 600V
VR = 600V, TJ = 125°C
Min Typ Max Unit
1.25
1.6
2.03
Volts
1.9
25
μA
250
31
pF
Microsemi Website - http://www.microsemi.com