APT2X51DC120J Datasheet, PDF (2/3 Pages) Microsemi Corporation – ISOTOP® SiC Diode Power Module

APT2X51DC120J
APT2X50DC120J
All ratings @ T_j = 25°C unless otherwise specified
Electrical Characteristics (per leg)
Symbol Characteristic
V_F Diode Forward Voltage
I_RM Maximum Reverse Leakage Current
Q_C Total Capacitive Charge
C Total Capacitance
Test Conditions
Min Typ Max Unit
I_F = 50A
V_R = 1200V
T_j = 25°C
T_j = 175°C
T_j = 25°C
T_j = 175°C
1.6 1.8 _V
2.3 3.0
160 1000 _µA
280 5000
I_F = 50A, V_R = 600V
di/dt =2500A/µs
200
nC
f = 1MHz, V_R = 200V
f = 1MHz, V_R = 400V
480
pF
345
Thermal and package characteristics (per leg)
Symbol Characteristic
R_thJC
R_thJA
V_ISOL
T_J,T_STG
T_L
Torque
Wt
Junction to Case Thermal resistance
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
Min Typ
2500
-55
29.2
Max Unit
0.32 _°C/W
20
V
175
300
°C
1.5 N.m
g
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
3
1.95 (.077)
2.14 (.084)
4
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
2
1
Dimensions in Millimeters and (Inches)
www.microsemi.com
2–3