APT2X51DC120J Datasheet, PDF (1/3 Pages) Microsemi Corporation – ISOTOP® SiC Diode Power Module

APT2X51DC120J
APT2X50DC120J
ISOTOP^® SiC Diode
Power Module
V_RRM = 1200V
I_F = 50A @ T_C = 100°C
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Application
• Uninterruptible Power Supply (UPS)
• Induction heating
• Welding equipment
• High speed rectifiers
Features
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• ISOTOP^® Package (SOT-227)
• Very low stray inductance
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Low losses
• Low noise switching
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• RoHS Compliant
Absolute maximum ratings (per leg)
Symbol
Parameter
Max ratings Unit
V_R Maximum DC reverse Voltage
V_RRM Maximum Peak Repetitive Reverse Voltage
1200
V
I_F(AV) Maximum Average Forward Current Duty cycle = 50% T_C = 100°C
50
A
I_FSM Non-Repetitive Forward Surge Current
10 µs TC = 25°C
650
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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