2N6303 Datasheet, PDF (2/3 Pages) Microsemi Corporation – Silicon PNP Power Transistors

2N6303
ELECTRICAL CHARACTERISTICS:
(25°Case Temperature Unless Otherwise Noted)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
V_CEO(sus)*
BV_CBO*
BV_EBO*
I_CEX*
I_CBO*
h_FE*
V_CE(sat)*
Collector-Emitter
Sustaining Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
(Note 1)
Collector-Emitter
Saturation Voltage
(Note 1)
I_C = 20 mAdc, I_B = 0 (Note 1)
I_C = 100 µAdc, I_E = 0
I_E = 100 µAdc, I_C = 0
V_CE = - 80V_, V_BE(off) = 2.0 Vdc
V_CB = - 80V, I_E = 0, T_C = 150° C
I_C = 500 mAdc, V_CE = - 1.0 Vdc
I_C = 1.5 Adc, V_CE = - 2.0 Vdc
I_C = 2.5 Adc, V_CE = - 3.0 Vdc
I_C = 3.0 Adc, V_CE = - 5.0 Vdc
I_C = 500 mAdc, I_B = 50 mAdc
I_C = 1.5 Adc, I_B = 150 mAdc
I_C = 2.5 Adc, I_B = 250 mAdc
V_BE(sat)*
Base-Emitter Saturation
Voltage
(Note 1)
I_C = 500 mAdc, I_B = 50 mAdc
I_C = 1.5 Adc, I_B = 150 mAdc
I_C = 2.5 Adc, I_B = 250 mAdc
f_T*
Current Gain Bandwidth _{IC = 100 mAdc, VCE = - 5.0 Vdc, ftest = 20 MHz}
Product (Note 2)
C_ob*
C_ib*
td*
tr*
ts*
tf*
Output Capacitance
Input Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
V_CB = - 10 Vdc, I_E = 0, f = 0.1 MHz
V_EB = - 3.0 Vdc, I_C = 0, f = 0.1 MHz
V_CC = - 30 Vdc, V_BE(off) = 0, I_C =1.5 Adc,
I_B1 = 150 mAdc
V_CC = - 30 Vdc, V_BE(off) = 0, I_C =1.5 Adc,
I_B1 = 150 mAdc
V_CC = - 30 Vdc, IC = 1.5 Adc, I_B1 = I_B2 =150 mAdc
V_CC = - 30 Vdc, IC = 1.5 Adc, I_B1 = I_B2 =150 mAdc
Note 1: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.
Note 2: fT = |hfe| * f_test
* Indicates JEDEC registered data.
VALUE
Min. Max.
- 80 ^----
Units
Vdc
- 80 ^{---- Vdc}
- 4.0 ^{---- Vdc}
----
----
35
30
20
20
----
----
----
----
- 0.9
----
60
1.0
150
----
150
----
----
- 0.5
- 0.75
- 1.3
- 1.0
- 1.4
- 2.0
----
µAdc
µAdc
----
----
----
----
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
MHz
---- 120 pF
---- 1000 pF
----
35
ns
----
65
ns
---- 325 ns
----
75
ns
MSC1062.PDF 05-25-99