2N6303 Datasheet, PDF (1/3 Pages) Microsemi Corporation – Silicon PNP Power Transistors

7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: [phone]
FAX: [phone]
APPLICATIONS:
• High-Speed Switching
• Medium-Current Switching
• High-Frequency Amplifiers
FEATURES:
• Collector-Emitter Sustaining Voltage: V_CEO(sus) = - 80 Vdc (Min)
• DC Current Gain: h_FE = 30-150 @ I_C = 1.5 Adc
• Low Collector-Emitter Saturation Voltage:
V_CE(sat) = - 0.75 Vdc @ I_C = 1.5 Adc
• High Current-Gain - Bandwidth Product: f_T = 90 MHz (Typ)
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED
PLANAR process. This technology produces high voltage devices
with excellent switching speeds, frequency response, gain linearity,
saturation voltages, high current gain, and safe operating areas.
They are intended for use in Commercial, Industrial, and Military
power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are
utilized to further increase the SOA capability and inherent reliability
of these devices. The temperature range to 200° C permits reliable
operation in high ambients, and the hermetically sealed package
insures maximum reliability and long life.
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
V_CEO*
V_CB*
V_EB*
I_C*
I_C*
I_B*
T_STG*
T_J*
P_D*
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Peak Collector Current
Continuous Collector Current
Base Current
Storage Temperature
Operating Junction Temperature
Total Device Dissipation
T_C = 25° C
Derate above 25° C
P_D*
Total Device Dissipation
T_A = 25° C
Derate above 25° C
θ JC
Thermal Resistance
Junction to Case
Junction to Ambient
* Indicates JEDEC registered data.
MSC1062.PDF 05-25-99
2N6303
Silicon PNP Power
Transistors
TO-5
VALUE
- 80
- 80
- 4.0
10
3.0
0.5
-65 to 200
-65 to 200
6.0
34.3
1.0
5.71
29
175
UNITS
Vdc
Vdc
Vdc
Adc
Adc
Adc
°C
°C
Watts
mW/° C
Watts
mW/° C
° C/W
° C/W