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| 2N6032 Datasheet, PDF (2/2 Pages) GE Solid State – HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS | |||
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2N6032, 2N6033, JAN SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
OFF CHARACTERISTICS (conât)
Emitter-Base Cutoff Current
VEB = 7.0 Vdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 50 Adc, VCE = 2.6 Vdc
2N6032
IC = 40 Adc, VCE = 2.0 Vdc
Collector-Emitter Saturation Voltage
2N6033
IC = 50 Adc, IB = 5.0 Adc
2N6032
IC = 40 Adc, IB = 4.0 Adc
Base-Emitter Saturation Voltage
2N6033
IC = 50 Adc, IB = 5.0 Adc
2N6032
IC = 40 Adc, IB = 4.0 Adc
2N6033
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ⤠f ⤠1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 50 Adc; IB = 5.0 Adc
2N6032
VCC = 30 Vdc; IC = 40 Adc; IB = 4.0 Adc
Turn-Off Time
2N6033
VCC = 30 Vdc±2; IC = 50 Adc; IB1 = 5 IB2 = -5 Adc 2N6032
VCC = 30 Vdc±2; IC = 40 Adc; IB1 = 4 IB2 = -4 Adc 2N6033
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 2.8 Vdc, IC = 50 Adc
Test 2
2N6032
VCE = 3.5 Vdc, IC = 40 Adc
Test 3
2N6033
VCE = 24 Vdc, IC = 5.8 Adc
Test 4
All Types
VCE = 40 Vdc, IC = 0.9 Adc
Test 5
All Types
VCE = 90 Vdc, IC = 0.18 Adc
Test 6
2N6032
VCE = 120 Vdc, IC = 0.1 Adc
2N6033
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
IEBO
ICEO
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
ton
toff
Min. Max. Unit
10
mAdc
10
mAdc
10
50
10
50
1.3
Vdc
1.0
2.0
Vdc
2.0
10
40
1,000
pF
0.5
µs
0.5
2.0
µs
2.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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