2N6032 Datasheet, PDF (1/2 Pages) GE Solid State – HIGH CURRENT HIGH SPEED HIGH POWER TRANSISTORS

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/528
Devices
2N6032
2N6033
TECHNICAL DATA
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N6032 2N6033
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Emitter-Base Voltage
Base Current
Total Power Dissipation
@ TC = +25⁰C ⁽¹⁾
V_CEO
V_CBO
I_C
V_EBO
IB
P_T
90
120
120
150
50
40
7.0
10
140
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
T_op, T_stg
-65 to +200
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
R_θJC
1.25
1) Derate linearly 800 mW/⁰C between TC = 25⁰C and TC = 200⁰C
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
2N6032
2N6033
V(BR)_CEO
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
2N6032
2N6033
V(BR)_CER
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc, V_EB = 1.5 Vdc
2N6032
2N6033
V(BR)_CEX
Collector-Base Cutoff Current
V_CB = 120 Vdc
2N6032
I_CBO
V_CB = 150 Vdc
Collector-Emitter Cutoff Current
2N6033
V_CE = 110 Vdc, V_BE =-1.5 Vdc
2N6032
I_CEX
V_CE = 135 Vdc, V_BE =-1.5 Vdc
2N6033
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Units
Vdc
Vdc
Adc
Vdc
Adc
W
0_C
Unit
0_C/W
Min.
90
120
110
140
120
150
TO-3*
(TO-204AA)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
Vdc
25
mAdc
25
12
mAdc
10
120101
Page 1 of 2