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| 2N5581 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN SILICON SWITCHING TRANSISTOR | |||
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2N5581, 2N5582 JAN SERIES
ELECTRICAL CHARACTERISTICS (conât)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
2N5581
IC =1.0 m Adc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc
2N5582
IC =1.0 m Adc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 10 Vdc
2N5581
2N5582
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ⤠f ⤠1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ⤠f ⤠1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ⤠2.0%.
Symbol
hFE
hFE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
Cibo
ton
toff
Min. Max. Unit
30
35
40
40
120
20
50
75
100
100
300
30
0.3
Vdc
1.0
0.6
1.2
Vdc
2.0
30
50
2.5
8.0
pF
25
pF
35
ηs
300
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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