2N5581 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN SILICON SWITCHING TRANSISTOR

TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/423
Devices
2N5581
2N5582
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25⁰C ⁽¹⁾
@ TC = 25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
1) Derate linearly 2.86 mW/⁰C for TA > 25⁰C
2) Derate linearly 11.43 mW/⁰C for TC > 25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_op, T_stg
Value
50
75
6.0
800
0.5
2.0
-55 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
W
0_C
TO-46*
(TO-206AB)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
V(BR)_CEO
Collector-Base Cutoff Current
V_CB = 60 Vdc
I_CBO
V_CB = 75 Vdc
Emitter-Base Cutoff Current
V_EB = 4.0Vdc
I_EBO
V_EB = 6.0Vdc
Min. Max.
Unit
50
Vdc
10
ηAdc
10
µAdc
10
ηAdc
10
µAdc
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