2N5339 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN POWER SILICON SWITCHING TRANSISTOR

2N5339 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS ⁽³⁾
Forward-Current Transfer Ratio
I_C = 0.5 Adc, V_CE = 2.0 Vdc
I_C = 2.0 Adc, V_CE = 2.0 Vdc
I_C = 5.0 Adc, V_CE = 2.0 Vdc
Collector-Emitter Saturation Voltage
I_C = 2.0 Adc, I_B = 0.2 Adc
I_C = 5.0 Adc, I_B = 0.5 Adc
Base-Emitter Saturation Voltage
I_C = 2.0 Adc, I_B = 0.2 Adc
I_C = 5.0 Adc, I_B = 0.5 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I_C = 0.5 Adc, V_CE = 10 Vdc, f = 10 MHz
Output Capacitance
V_CB = 10 Vdc, I_E = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
V_BE = 2.0 Vdc, I_E = 0, 100 kHz ≤ f ≤ 1.0 MHz
SAFE OPERATING AREA
DC Tests
T_C = +25⁰C, 1 Cycle, t ≥ 0.5 s
Test 1
V_CE = 2.0 Vdc, I_C = 5.0 Adc
Test 2
V_CE = 5.0 Vdc, I_C = 2.0 Adc
Test 3
V_CE = 90 Vdc, I_C = 55 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
h_FE
V_CE(sat)
V_BE(sat)
h_fe
C_obo
C_ibo
Min. Max. Unit
60
60
240
40
0.7
Vdc
1.2
1.2
Vdc
1.8
3.0
15
250
pF
1,000
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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