2N5339 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON SWITCHING TRANSISTOR

TECHNICAL DATA
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/560
Devices
2N5339
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.71 mW/⁰C for TA > 25⁰C
2) Derate linearly 57.1 mW/⁰C for TC > 25⁰C
Symbol
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_op, T_stg
Value
100
100
6.0
1.0
5.0
1.0
10
-55 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Symbol
R_θJC
Max.
17.5
Unit
0_C/W
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 50 mAdc
V(BR)_CEO
Collector-Emitter Cutoff Current
V_CE = 100 Vdc
I_CEO
Collector-Emitter Cutoff Current
V_CE = 90 Vdc, V_BE = 1.5 Vdc
I_CEX
Collector-Base Cutoff Current
V_CB = 100 Vdc
I_CBO
Emitter-Base Cutoff Current
V_EB = 6.0 Vdc
I_EBO
Min.
100
TO-39*
(TO-205AD)
*See appendix A for
package outline
Max.
Unit
Vdc
100
µAdc
10
µAdc
10
µAdc
100
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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