2N5152_1 Datasheet, PDF (2/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
I_C = 5Adc, V_CE = 5Vdc
Collector-Emitter Saturation Voltage
I_C = 2.5Adc, I_B = 250mAdc
I_C = 5.0Adc, I_B = 500mAdc
2N5152
2N5154
Symbol
h_FE
V_CE(sat)
Min.
20
40
Base-Emitter Voltage Non-Saturation
I_C = 2.5Adc, V_CE = 5Vdc
Base-Emitter Saturation Voltage
I_C = 2.5Adc, I_B = 250mAdc
I_C = 5.0Adc, I_B = 500mAdc
V_BE
V_BE(sat)
Max.
Unit
0.75
Vdc
1.5
1.45
Vdc
1.45
Vdc
2.2
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I_C = 500mAdc, V_CE = 5Vdc, f = 10MHz
2N5152
2N5154
Small-signal short Circuit Forward-Current Transfer Ratio
I_C = 100mAdc, V_CE = 5Vdc, f = 1KHz
2N5152
2N5154
Output Capacitance
V_CB = 10Vdc, I_E = 0, f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
I_C = 5Adc, I_B1 = 500mAdc
Turn-Off Time
R_L = 6Ω
Storage Time
I_B2 = -500mAdc
Fall Time
V_BE(OFF) = 3.7Vdc
SAFE OPERATING AREA
DC Tests
T_C = +25°C, 1 Cycle, t_P = 1.0s
Test 1
V_CE = 5.0Vdc, I_C = 2.0Adc
Test 2
V_CE = 32Vdc, I_C = 310mAdc
Test 3
V_CE = 80Vdc, I_C = 12.5mAdc
Symbol
|h_fe|
h_fe
C_obo
Symbol
t_on
t_off
t_s
t_f
Min.
6
7
20
50
Min.
Max.
Unit
250
Max.
0.5
1.5
1.4
0.5
pF
Unit
μs
μs
μs
μs
T4-LDS-0039 Rev. 1 (080797)
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