2N5152_1 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
DEVICES
2N5152
2N5152L
2N5152U3
2N5154
2N5154L
2N5154U3
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Collector-Emitter Voltage
V_CEO
Collector-Base Voltage
V_CBO
Emitter-Base Voltage
V_EBO
Collector Current
I_C
Total Power Dissipation ⁽¹⁾
@ T_A = +25°C
@ T_C = +25°C
P_T
Operating & Storage Junction Temperature Range
T_J , T_stg
Thermal Resistance, Junction-to Case ⁽¹⁾
R_θJC
Note:
1) See 19500/544 for thermal derating curves.
2) This value applies for P_W ≤ 8.3ms, duty cycle ≤ 1%.
Value
80
100
5.5
2.0
1.0
10
-65 to +200
10
1.7 (U3)
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 100mAdc, I_B = 0
Emitter-Base Cutoff Current
V_EB = 4.0Vdc, I_C = 0
V_EB = 5.5Vdc, I_C = 0
Collector-Emitter Cutoff Current
V_CE = 60Vdc, V_BE = 0
V_CE = 100Vdc, V_BE = 0
Collector-Emitter Cutoff Current
V_CE = 40Vdc, I_B = 0
ON CHARACTERTICS
Forward-Current Transfer Ratio
I_C = 50mAdc, V_CE = 5Vdc
I_C = 2.5Adc, V_CE = 5Vdc
2N5152
2N5154
2N5152
2N5154
Symbol
V_(BR)CEO
I_EBO
I_CES
I_CEO
h_FE
Min. Max. Unit
80
Vdc
1.0
µAdc
1.0
mAdc
1.0
µAdc
1.0
mAdc
50
µAdc
20
---
50
---
30
90
70
200
LEVELS
JAN
JANTX
JANTXV
JANS
TO-5
2N5152L, 2N5154L
TO-39 (TO-205AD)
2N5152, 2N5154
U-3
2N5152U3, 2N5154U3
T4-LDS-0039 Rev. 1 (080797)
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