2N5151_1 Datasheet, PDF (2/4 Pages) Microsemi Corporation – PNP POWER SILICON TRANSISTOR

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
I_C = 50mAdc, V_CE = 5Vdc
2N5151
2N5153
I_C = 2.5Adc, V_CE = 5Vdc
2N5151
2N5153
I_C = 5Adc, V_CE = 5Vdc
2N5151
2N5153
Collector-Emitter Saturation Voltage
I_C = 2.5Adc, I_B = 250mAdc
I_C = 5.0Adc, I_B = 500mAdc
Base-Emitter Voltage Non-Saturation
I_C = 2.5Adc, V_CE = 5Vdc
Base-Emitter Saturation Voltage
I_C = 2.5Adc, I_B = 250mAdc
I_C = 5.0Adc, I_B = 500mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I_C = 500mAdc, V_CE = 5Vdc, f = 10MHz
2N5151
2N5153
Common-Emitter Small-Signal Short-Circuit. Forward-Current Transfer Ratio
I_C = 100mAdc, V_CE = 5Vdc, f = 1kHz
2N5151
2N5153
Output Capacitance
V_CB = 10Vdc, I_E = 0, f = 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
I_C = 5Adc, I_B1 = 500mAdc
I_B2 = -500mAdc
R_L = 6Ω
V_BE(OFF) = 3.7Vdc
Turn-Off Time
I_C = 5Adc, I_B1 = 500mAdc
I_B2 = -500mAdc
R_L = 6Ω
V_BE(OFF) = 3.7Vdc
Symbol
h_FE
V_CE(sat)
V_BE
V_BE(sat)
|h_fe|
h_fe
C_obo
Symbol
t_on
t_off
Min.
20
50
30
70
20
40
6
7
20
50
Min.
Max.
Unit
90
200
0.75
Vdc
1.5
1.45
Vdc
1.45
Vdc
2.2
250
Max.
0.5
pF
Unit
μs
1.5
μs
T4-LDS-0132 Rev. 1 (091476)
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