2N5151_1 Datasheet, PDF (1/4 Pages) Microsemi Corporation – PNP POWER SILICON TRANSISTOR

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/545
DEVICES
2N5151
2N5151L
2N5151U3
2N5153
2N5153L
2N5153U3
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
2N5151, 2N5153, L
2N5151, 2N5153, L
2N5151U3, 2N5153U3
2N5151U3, 2N5153U3
@ T_A = +25°C ⁽¹⁾
@ T_C = +25°C ⁽²⁾
@ T_A = +25°C ⁽³⁾
@ T_C = +25°C ⁽⁴⁾
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
Note:
1)
2)
3)
4)
Derate linearly 5.7mW/°C for T_A > +25°
Derate linearly 66.7mW/°C for T_A > +25°
Derate linearly 6.63mW/°C for T_A > +25°
Derate linearly 571mW/°C for T_A > +25°
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J , T_stg
R_θJC
80
Vdc
100
Vdc
5.5
Vdc
2.0
Adc
1.0
10
1.16
100
-65 to +200
10
1.75 (U3)
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 100mAdc, I_B = 0
Symbol
Min. Max. Unit
V_(BR)CEO
80
Vdc
Emitter-Base Cutoff Current
V_EB = 4.0Vdc, I_C = 0
V_EB = 5.5Vdc, I_C = 0
I_EBO
1.0
µAdc
1.0
mAdc
Collector-Emitter Cutoff Current
V_CE = 60Vdc, V_BE = 0
I_CES
V_CE = 100Vdc, V_BE = 0
1.0
µAdc
1.0
mAdc
Collector-Base Cutoff Current
V_CE = 40Vdc, I_B = 0
I_CEO
50
µAdc
TO-5
2N5151L, 2N5153L
(See Figure 1)
TO-39 (TO-205AD)
2N5151, 2N5153
U-3
2N5151U3, 2N5153U3
T4-LDS-0132 Rev. 1 (091476)
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