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| 2N5003 Datasheet, PDF (2/2 Pages) Semicoa Semiconductor – Type 2N5003 Geometry 9702 Polarity PNP | |||
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2N5003, 2N5005 JAN SERIES
ELECTRICAL CHARACTERISTICS (Conât)
Characteristics
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 5.0 Vdc
IC = 2.5 Adc, VCE = 5.0 Vdc
IC = 5.0 Adc, VCE = 5.0 Vdc
2N5003
IC = 50 mAdc, VCE = 5.0 Vdc
IC = 2.5 Adc, VCE = 5.0 Vdc
IC = 5.0 Adc, VCE = 5.0 Vdc
2N5005
Base-Emitter Voltage Non-saturated
VCE = 5.0 Adc, IC =2.5 Adc
Collector-Emitter Saturation Voltage
IC = 2.5 Adc, IB = 250 mAdc
IC = 5.0 Adc, IB = 500 mAdc
Base-Emitter Saturation Voltage
IC = 2.5 Adc, IB = 250 mAdc
IC = 5.0 Adc, IB = 500 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
2N5003
IC = 100 mAdc, VCE = 5.0 Vdc, f = 10 MHz
Common Emitter Small-Signal Short-Circuit
2N5005
Forward Current Transfer Ratio
2N5003
IC = 500 mAdc, VCE = 5.0 Vdc, f = 10 MHz
Output Capacitance
2N5005
VCB = 10 Vdc, IE = 0, f = 1 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
IC = 5 Adc; IB1= 500 mAdc
Storage Time IB2= -500 mAdc
Fall Time
V BE(OFF) = 3.7 Vdc
Turn-Off Time
RL = 6 â¦
SAFE OPERATING AREA
DC Tests
TC = +250C, VCE = 0, tP = 1 second 1 Cycle
Test 1
VCE = 12 Vdc, IC = 5 Adc
Test 2
VCE = 32 Vdc, IC = 1.7 Adc
Test 3
VCE = 80 Vdc, IC = 100 mAdc
Symbol
hFE
VBE
VCE(sat)
VBE(sat)
hfe
hfe
Cobo
ton
ts
tf
toff
Min. Max. Unit
20
30
90
20
50
70
200
40
1.45
Vdc
0.75
Vdc
1.5
1.45
Vdc
2.2
2.0
50
6.0
7.0
250
PF
0.5
µs
1.4
µs
0.5
µs
1.5
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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