2N5003 Datasheet, PDF (1/2 Pages) Semicoa Semiconductor – Type 2N5003 Geometry 9702 Polarity PNP

PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/535
Devices
2N5003
2N5005
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T_A = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1) Derate linearly 11.4 mW/⁰C for TA > +25⁰C
2) Derate linearly 331 mW/⁰C for TC > +25⁰C
3) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_C(3)
P_T
T_J, T_stg
Symbol
R_θJC
R_θJA
Value
80
100
5.5
5.0
10
2.0
58
-65 to +200
Max.
3.0
88
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100 mAdc,
Collector-Emitter Cutoff Current
V_CE = 40 Vdc, IB = 0
Collector-Emitter Cutoff Current
V(BR)_CEO
I_CEO
V_CE = 60 Vdc, V_BE = 0
I_CES
V_CE = 100 Vdc, V_BE = 0
Emitter-Base Cutoff Current
V_BE = 4.0 Vdc, IC = 0
I_EBO
V_BE = 5.5 Vdc, IC = 0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
Vdc
Adc
W
0_C
Unit
0_C/W
0_C/W
Min.
80
TO-59
*See appendix A for
package outline
Max.
Unit
Vdc
50
µAdc
1.0
µAdc
1.0
mAdc
1.0
MAdc
1.0
MAdc
120101
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