2N4261 Datasheet, PDF (2/4 Pages) Semicoa Semiconductor – Type 2N4261 Geometry 0014 Polarity PNP

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TECHNICAL DATA SHEET
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS ⁽⁴⁾
Forward-Current Transfer Ratio
I_C = 1.0mAdc, V_CE = 1Vdc
I_C = 10mAdc, V_CE = 1Vdc
I_C = 30mAdc, V_CE = 1Vdc
Symbol
h_FE
Min.
25
30
20
Max.
Unit
150
Collector-Emitter Saturation Voltage
I_C = 1mAdc, I_B = 0.1mAdc
I_C = 10mAdc, I_B = 1.0mAdc
Base-Emitter Saturation Voltage (Non-Saturated)
V_CE = 1Vdc, I_C = 1mAdc
V_CE = 1Vdc, I_C = 10mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small–Signal Forward Current Transfer Ratio
I_C = 10mAdc, V_CE = 10Vdc, f = 100MHz
Output Capacitance
V_CB = 4Vdc, I_E = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
V_EB = 0.5Vdc, I_C = 0, 100kHz ≤ f ≤ 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V_CC = 17Vdc; I_C = 10mAdc
Turn-Off Time
V_CC = 17Vdc; I_C = 10mAdc
(4) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%.
V_CE(sat)
V_BE
0.6
Symbol
|h_fe|
C_obo
C_ibo
Min.
20
Symbol
t_on
t_off
Min.
0.15
Vdc
0.35
0.80
Vdc
1.0
Max.
Unit
2.5
pF
2.5
pF
Max.
Unit
2.5
ηs
3.5
ηs
T4-LDS-0150 Rev. 1 (092064)
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