2N4261 Datasheet, PDF (1/4 Pages) Semicoa Semiconductor – Type 2N4261 Geometry 0014 Polarity PNP

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TECHNICAL DATA SHEET
PNP SMALL SIGNAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/511
DEVICES
2N4261
2N4261UB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T_A = +25°C
Operating & Storage Junction Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_T
T_op, T_stg
15
15
4.5
30
0.2
-65 to +200
Note: Consult 19500/511 for Thermal Performance Curves.
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
TO-72
2N4261
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
Collector-Base Cutoff Current
V_CB = 15Vdc
Emitter-Base Cutoff Current
V_EB = 4.5Vdc
Collector-Emitter Cutoff Current
V_CE = 10Vdc, V_BE = 0.4Vdc
Collector-Emitter Cutoff Current
V_CE = 10Vdc, V_BE = 2.0Vdc
V_(BR)CEO
15
I_CBO
I_EBO
I_CEX1
I_CEX2
Vdc
10
μAdc
10
μAdc
50
ηAdc
5
ηAdc
3 PIN
2N4261UB
T4-LDS-0150 Rev. 1 (092064)
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