2N3996_1 Datasheet, PDF (2/4 Pages) Microsemi Corporation – NPN POWER SWITCHING SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS ⁽²⁾
Forward-Current Transfer Ratio
I_C = 50mAdc, V_CE = 2.0Vdc
I_C = 1.0Adc, V_CE = 2.0Vdc
I_C = 5.0Adc, V_CE = 5.0Vdc
I_C = 50mAdc, V_CE = 2.0Vdc
I_C = 1.0Adc, V_CE = 2.0Vdc
I_C = 5.0Adc, V_CE = 5.0Vdc
Collector-Emitter Saturation Voltage
I_C = 1.0Adc, I_B = 0.1Adc
I_C = 5.0Adc, I_B = 0.5Adc
Base-Emitter Saturation Voltage
I_C = 1.0Adc, I_B = 0.1Adc
I_C = 5.0Adc, I_B = 0.5Adc
Symbol
2N3996, 2N3998
h_FE
2N3997, 2N3999
V_CE(sat)
V_BE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I_C = 1.0Adc, V_CE = 5.0Vdc, f = 10MHz
Output Capacitance
V_CB = 10Vdc, I_E = 0, 100kHz ≤ f ≤ 1.0MHz
SAFE OPERATING AREA
Symbol
|h_fe|
C_obo
DC Tests
T_C = +100°C, 1 Cycle, t = 1.0s
Test 1
V_CE = 80Vdc, I_C = 0.08Adc
Test 2
V_CE = 20Vdc, I_C = 1.5Adc
(4) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Min.
30
40
15
60
80
20
0.6
Min.
3.0
Max.
Unit
120
240
0.25
Vdc
2.0
1.2
Vdc
1.6
Max.
Unit
12
150
pF
T4-LDS-0165 Rev. 1 (100688)
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