2N3996_1 Datasheet, PDF (1/4 Pages) Microsemi Corporation – NPN POWER SWITCHING SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
DEVICES
2N3996
2N3997
2N3998
2N3999
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Collector-Emitter Voltage
V_CEO
Collector-Base Voltage
V_CBO
Emitter-Base Voltage
V_EBO
Base Current
I_B
Collector Current
I_C
Total Power Dissipation
@ T_A = +25°C ⁽²⁾
@ T_C = +100°C ⁽³⁾
P_T
Operating & Storage Junction Temperature Range
T_J, T_stg
Thermal Resistance, Junction-to-Case
R_θJC
Note:
(1) This value applies for Tp ≤ 1.0ms, duty cycle ≤ 50%
(2) Derate linearly 11.4 mW/°C for T_A > +25°C
(3) Derate linearly 300 mW/°C for T_C > +100°C
80
100
8.0
0.5
10 ⁽¹⁾
2.0
30
-65 to +200
3.33
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min.
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 50mAdc
V_(BR)CEO
80
Collector-Emitter Breakdown Voltage
I_C = 10µAdc
V_(BR)CBO
100
Collector-Emitter Cutoff Current
V_CE = 60Vdc
I_CEO
Collector-Emitter Cutoff Current
V_CE = 80Vdc, V_BE = 0V
I_CES
Emitter-Base Cutoff Current
V_EB = 5.0Vdc
V_EB = 8.0Vdc
I_EBO
Max.
10
200
200
10
Unit
Vdc
Vdc
µAdc
ηAdc
ηAdc
µAdc
TO-111
2N3996, 2N3997
TO-59
2N3998, 2N3999
T4-LDS-0165 Rev. 1 (100688)
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