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| 2N3960 Datasheet, PDF (2/4 Pages) Semicoa Semiconductor – Type 2N3960 Geometry 0003 Polarity NPN | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 1mAdc, VCE = 1Vdc
IC = 10mAdc, VCE = 1Vdc
Symbol
hFE
IC = 30mAdc, VCE = 1Vdc
Collector-Emitter Saturation Voltage
IC = 1.0mAdc, IB = 0.1mAdc
IC = 30mAdc, IB = 3.0mAdc
Base-Emitter Saturation Voltage
VCE = 1.0Vdc, IC = 1.0mAdc
VCE = 1.0Vdc, IC = 3.0mAdc
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small â Signal Short â Circuit - Forward Current Transfer
Ratio
IC = 5.0mAdc, VCE = 4Vdc, f = 100MHz
IC = 10.0mAdc, VCE = 4Vdc, f = 100MHz
IC = 30.0mAdc, VCE = 4Vdc, f = 100MHz
Output Capacitance
VCB = 4Vdc, IE = 0, 100kHz ⤠f ⤠1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ⤠f ⤠1.0MHz
Symbol
|hfe|
Cobo
Cibo
Min.
40
60
30
Min.
13
14
12
Max.
Unit
300
0.2
0.3
Vdc
0.8
Vdc
1.0
Max.
Unit
2.5
pF
2.5
pF
T4-LDS-0161 Rev. 1 (100514)
Page 2 of 4
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