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| 2N3960 Datasheet, PDF (1/4 Pages) Semicoa Semiconductor – Type 2N3960 Geometry 0003 Polarity NPN | |||
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/399
DEVICES
2N3960
2N3960UB
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation @ TA = +25°C
Operating & Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
PT (1)
Top, Tstg
Value
12
20
4.5
0.4
-65 to +200
Unit
Vdc
Vdc
Vdc
W
°C
Note:
Derate linearly 2.3mW/°C above TA = +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10μAdc
Collector-Base Cutoff Current
VCB = 20Vdc
Emitter-Base Cutoff Current
VEB = 4.5Vdc
Collector-Emitter Cutoff Current
VCE = 10Vdc, VBE = 0.4Vdc
VCE = 10Vdc, VBE = 2.0Vdc
Symbol
Min.
Max. Unit
V(BR)CEO
12
Vdc
ICBO
IEBO
ICEX1
ICEX2
10
μAdc
10
μAdc
1
μAdc
5
ηAdc
TO-18 â 2N3960
UB â 2N3960UB
T4-LDS-0161 Rev. 1 (100514)
Page 1 of 4
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