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2N3867 Datasheet, PDF (2/2 Pages) Microsemi Corporation – Silicon PNP Power Transistors
2N3867, S; 2N3868, S JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 500 mAdc, VCE = 1.0 Vdc
2N3867, S
2N3868, S
IC = 1.5 Adc, VCE = 2.0 Vdc
2N3867, S
2N3868, S
IC = 2.5 Adc, VCE = 3.0 Vdc
2N3867, S
2N3868, S
IC = 3.0 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
All Types
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
Base-Emitter Saturation Voltage
IC = 500 mAdc, IB = 50 mAdc
IC = 1.5 Adc, IB = 150 mAdc
IC = 2.5 Adc, IB = 250 mAdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 5.0 Vdc, f = 20 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 3.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time VCC = -30 Vdc, VEB = 0,
Rise Time
IC = 1.5 Adc, IB1 = 150 mAdc
Storage Time VCC = -30 Vdc, VEB = 0,
Fall Time
IC = 1.5Adc, IB1 = IB2 = 150 mAdc
Turn-On Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc
Turn-Off Time
VCC = 30, IC = 1.5 Adc, IB = 150 mAdc
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 3.33 Vdc, IC = 3.0 Adc
Test 2
VCE = 40 Vdc, IC = 160 mAdc
2N3867, S
VCE = 60 Vdc, IC = 80 mAdc
2N3868, S
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
hfe
Cobo
Cibo
td
tr
ts
tf
ton
toff
Min. Max. Unit
50
35
40
200
30
150
25
20
20
0.5
0.75
Vdc
1.5
1.0
0.9
1.4
Vdc
2.0
3.0
12
120
pF
800
pF
35
ηs
65
ηs
500
ηs
100
ηs
100
ηs
600
ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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